منابع مشابه
Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures using “SrAlOx” Sliding Buffer Layers
Sliding Buffer Layers H. K. Sato,1, a) J. A. Mundy,2 T. Higuchi,1 Y. Hikita,1 C. Bell,1, 3 D. A. Muller,2, 4 and H. Y. Hwang1, 3, 5 1)Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan 2)School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA 3)Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan 4)Kavli ...
متن کاملInfrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
Infrared reflection spectroscopy is applied to state-of-the-art thin film heterostructures of group-III nitrides on sapphire and Si substrates. The individual layers of GaN and AlGaN and the AlN buffer layer are identified by their phonon frequencies. Under non-perpendicular incidence of the light, A1~LO! phonon modes are observed in the wurtzite system. The presence of the very thin AlN buffer...
متن کاملProximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
AlGaN/GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on freestanding semi-insulating GaN substrates, employing unintentionally-doped (UID) GaN buffer layers with thicknesses, dUID, varying between 50 nm and 500 nm. We have found that the heterostructures with UID buffers thicker than 200 nm exhibit much improved Hall properties and inter-device isolation current...
متن کاملElectronic states in heterostructures formed by ultranarrow layers.
Low-energy electronic states in heterostructures formed by ultranarrow layers (single or several monolayers in thickness) are studied theoretically. The host material is described within the effective mass approximation and the effect of ultranarrow layers is taken into account within the framework of the transfer matrix approach. Using the current conservation requirement and the inversion sym...
متن کاملEpitaxy and growth of titanium buffer layers on
The structure and growth of thin films of titanium on α−Al2O3 at room temperature were investigated though in situ RHEED observations. Two different structures coexists at low coverage. One corresponds to the Ti(0001) ‖ Al2O3(0001), Ti[1100] ‖ Al2O3[2110] and Ti[1010] ‖ Al2O3[1100] epitaxy of the α phase of titanium reported before for thick films prepared at high temperature. The other structu...
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ژورنال
عنوان ژورنال: Modern Electronic Materials
سال: 2017
ISSN: 2452-1779
DOI: 10.1016/j.moem.2017.11.006